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IDB10S60C

Infineon Technologies

2nd Generation thinQ SiC Schottky Diode


Description
IDB10S60C 2nd Generation thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide Switching behavior benchmark No reverse recovery/ No forward recovery No temperature influence on the switching behavior High surge current capability Pb-free lead plating; RoHs compliant www.DataSheet4U.net Product Summary V DC ...



Infineon Technologies

IDB10S60C

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