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IDT03S60C

Infineon Technologies

Schottky Diode


Description
IDT03S60C 2ndGeneration thinQ!TM SiC Schottky Diode Features Revolutionary semiconductor material - Silicon Carbide No reverse recovery/ no forward recovery Temperature independent switching behavior High surge current capability Qualified according to JEDEC1) for target applications Breakdown voltage tested at 5mA2) Optimized for high tempera...



Infineon Technologies

IDT03S60C

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