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Insulated Gate Bipolar Transistor
20AMPEFlES 400, 500 VOLTS
EQUIV. RDS(ON) =0.145 n.
This IG"f"I Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device combining the best advantages of power MOSFETS and bipolar transistors. The result is a device that has the high input impedance of MOSFETS and ...
