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ILA03N60, ILP03N60 ILB03N60, ILD03N60
LightMOS Power Transistor
C
New high voltage technology designed for ZVS-switching in lamp ballasts IGBT with integrated reverse diode 4A current rating for reverse diode Up to 10 times lower gate capacitance than MOSFET Avalanche rated 150°C operating temperature FullPak isolates...
