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IMW120R140M1H MOSFET Datasheet PDF

Silicon Carbide MOSFET

Silicon Carbide MOSFET

 

 

 

Part Number IMW120R140M1H
Description Silicon Carbide MOSFET
Feature IMW120R140M1H IMW120R140M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switchi ng losses Gate pin 1  Threshold-f ree on state characteristic  Wide g ate-source voltage range  Benchmark gate threshold voltage, VGS(th) = 4.
5V  0V turn-off gate voltage for easy and simple gate drive  Fully contr ollable dV/dt  Robust body diode fo r hard commutation  Temperature ind ependent turn-off switching losses Ben efits  Efficiency improvement  En abling higher frequency  Increased p ower density  Cooling effort reducti on  Reduction of system complexity a nd .
Manufacture Infineon
Datasheet
Download IMW120R140M1H Datasheet

IMW120R140M1H

 

 

 


 

 

 

Part Number IMW120R140M1H
Description Silicon Carbide MOSFET
Feature IMW120R140M1H IMW120R140M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Features  Very low switchi ng losses Gate pin 1  Threshold-f ree on state characteristic  Wide g ate-source voltage range  Benchmark gate threshold voltage, VGS(th) = 4.
5V  0V turn-off gate voltage for easy and simple gate drive  Fully contr ollable dV/dt  Robust body diode fo r hard commutation  Temperature ind ependent turn-off switching losses Ben efits  Efficiency improvement  En abling higher frequency  Increased p ower density  Cooling effort reducti on  Reduction of system complexity a nd .
Manufacture Infineon
Datasheet
Download IMW120R140M1H Datasheet

IMW120R140M1H

 

 

 

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