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IPA60R125P6
N-Channel MOSFET
Description
isc N-Channel
MOSFET
Transistor IPA60R125P6,IIPA60R125P6 ·FEATURES ·Drain-source on-resistance: RDS(on) ≤0.125Ω (max) ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·It is intended for general purpose switching applications ·ABSOLUTE MAXIMUM RAT...
INCHANGE
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