IPB600N25N3 G IPP600N25N3 G IPI600N25N3 G
OptiMOSTM3 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max ID
175 °C operating temperature
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1) for target application
Hal...
