IPB35CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G IPU33CN10N G
OptiMOS®2 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on)
Product Summary V DS R DS(on),max (TO252) ID
100 V 34 mΩ 27 A
175 °C operating temperature
Pb-free lead plating; RoHS compliant Qualified a...
