DatasheetsPDF.com
IPD65R1K4C6
N-Channel MOSFET
Description
isc N-Channel
MOSFET
Transistor IPD65R1K4C6,IIPD65R1K4C6 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast switching ·Very high commutation ruggedness ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER ...
INCHANGE
Download IPD65R1K4C6 Datasheet
Similar Datasheet
IPD65R1K4C6
MOSFET
- Infineon
@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (
Privacy Policy & Contact
)
