IPB35CN10N G IPI35CN10N G IPP35CN10N G
IPD33CN10N G IPU33CN10N G
OptiMOS®2 Power-Transistor
Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application
Product Summary V DS ...
