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IPW60R180C7

INCHANGE
Part Number IPW60R180C7
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Oct 2, 2020
Detailed Description isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R180C7 IIPW60R180C7 ·FEATURES ·Static drain-source on-resi...
Datasheet PDF File IPW60R180C7 PDF File

IPW60R180C7
IPW60R180C7

Overview
isc N-Channel MOSFET Transistor INCHANGE Semiconductor IPW60R180C7 IIPW60R180C7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤180mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Fast Switching ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 13 IDM Drain Current-Single Pulsed 45 PD Total Dissipation @TC=25℃ 68 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(j-c) Channel-to-cas...


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