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IRF610A

Fairchild Semiconductor
Part Number IRF610A
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published Jul 2, 2007
Detailed Description Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Datasheet PDF File IRF610A PDF File

IRF610A
IRF610A

Overview
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 µA (Max.
) @ VDS = 200V Low RDS(ON) : 1.
169 Ω (Typ.
) 1 2 3 IRF610A BVDSS = 200 V RDS(on) = 1.
5 Ω ID = 3.
3 A TO-220 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM www.
DataSheet4U.
com Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C ) ) Continuous Drain Current (TC=100 oC Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Total Power Dissipation (TC=25 oC ) Linear ...


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