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FIELD EFFECT PONER TRANSISTOR
IRFF212,213
1.8 AMPERES 200, 150 VOLTS
ROS(ON} = 2.4 n
Preliminary
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most switc...
