~~D~[P~U IRFF230,231
FIELD EFFECT POWER TRANSISTOR
5.5 AMPERES 200,150 VOLTS
ROS(ON) =0.4 n
Preliminary
This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS technology to achieve low on-resistance with excellent device ruggedness and reliability.
This design has been optimized to give superior performance in most swit...
