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IRFR310
Power MOSFET
Description
$GYDQFHG 3RZHU 026)(7 IRFR310 FEATURES ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology ♦ Lower Input Capacitance ♦ Improved Gate Charge ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 400V ♦ Low RDS(ON): 2.815Ω (Typ.) BVDSS = 400 V RDS(on) = 3.6Ω ID = 1.7 A D-PAK I-PAK 2 11 3 2 3 Absolute Maximum Ratings Sym...
Fairchild Semiconductor
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