INSULATED GATE BIPOLAR TRANSISTOR
Description
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Preliminary Data Sheet PD - 9.1135
IRGBC40M-S
INSULATED GATE BIPOLAR TRANSISTOR
Features
Short circuit rated - 10µs @ 125°C, V GE = 15V Switching-loss rating includes all "tail" losses Optimized for medium operating frequency (1 to 10kHz)
G E C
Short Circuit Rated Fast IGBT
VCES = 600V...
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