INSULATED GATE BIPOLAR TRANSISTOR
Description
PD-95321
IRGIB6B60KDPbF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
Features
Low VCE (on) Non Punch Through IGBT Technology. Low Diode VF. 10µs Short Circuit Capability. Square RBSOA. Ultrasoft Diode Reverse Recovery Characteristics. Positive VCE (on) Temperature Coefficient. Lead-Free.
C
VCES = 600V IC = 6.0A, TC=90°...
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