SWITCHER. IRIS-A6359 Datasheet

IRIS-A6359 Datasheet PDF


Part IRIS-A6359
Description INTEGRATED SWITCHER
Feature Data Sheet No. PD 96937A IRIS-A6359 Features INTEGRATED SWITCHER • Oscillator is provided on the.
Manufacture International Rectifier
Datasheet
Download IRIS-A6359 Datasheet


Data Sheet No. PD 96937A IRIS-A6359 Features INTEGRATED S IRIS-A6359 Datasheet




IRIS-A6359
Data Sheet No. PD 96937A
IRIS-A6359
Features
INTEGRATED SWITCHER
Oscillator is provided on the monolithic control IC with adopting On-Chip-
Trimming technology.
Package Outline
Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
Low start-up circuit current (50uA max)
Built-in Active Low-Pass Filter for stabilizing the operation in case of light
load
Avalanche energy guaranteed MOSFET with high VDSS
The built-in power MOSFET simplifies the surge absorption circuit
since the MOSFET guarantees the avalanche energy.
No VDSS de-rating is required.
Built-in constant voltage drive circuit
8 Lead PDIP
Various kinds of protection functions
Pulse-by-pulse Overcurrent Protection (OCP)
Overvoltage Protection with latch mode (OVP)
Thermal Shutdown with latch mode (TSD)
Descriptions
Key Specifications
Type
MOSFET
VDSS(V)
RDS(ON)
MAX
AC input(V)
Pout(W)
Note 1
230±15%
7
IRIS-A6359
650
6.00Ω
85 to 264
5
Note 1: The Pout(W) represents the thermal rating at PRC Operation, and
the peak power output is obtained by approximately 120 to 150% of the
above listed. When the output voltage is low and ON-duty is narrow, the
Pout(W) shall become lower than that of above.
IRIS-A6359 is a hybrid IC consists from power MOSFET and a controller IC, designed for PRC fly-back converter type
SMPS (Switching Mode Power Supply) applications, applicable for PRC operation for small power SMPS. This IC
realizes downsizing and standardizing of a power supply system reducing external components count and simplifying
the circuit designs. (Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time).
Typical Connection Diagram
IRIS-A6359
18
27
36
45
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IRIS-A6359
IRIS-A6359
Absolute Maximum Ratings (Ta=25ºC)
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol
Definition
IDpeak Drain Current
*1
IDMAX Maximum switching current *5
Terminals Max. Ratings
8 1.8
8 1.8
EAS Single pulse avalanche energy *2
8-1
24
Vin Input voltage for control part
3-2 35
Vth O.C.P/F.B Pin voltage
4-2 6
PD1 Power dissipation for MOSFET *3 8-1
1.35
Power dissipation for control part
PD2
(Control IC) *4
3-2 0.14
Internal frame temperature
TF in operation
- -20 ~ +125
Top Operating ambient temperature
- -20 ~ +125
Tstg Storage temperature
- -40 ~ +125
Tch Channel temperature
- 150
Units
A
A
mJ
V
V
W
W
Note
Single Pulse
V1-2=0.82V
Ta=-20~+125
Single Pulse
VDD=99V,L=20mH
IL=1.8A
*6
Specified by
Vin×Iin
Refer to recommended
operating temperature
*1 Refer to MOS FET A.S.O curve
*2 MOS FET Tch-EAS curve
*3 Refer to MOS FET Ta-PD1 curve
Fig.1
V1-2
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current. The maximum switching current is the Drain current determined by the drive
voltage of the IC and threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop
occurs between Pin 1and Pin 2 due to patterning, the maximum switching current decreases as shown by
V1-2 in Fig.1 Accordingly please use this device within the decrease value, referring to the derating
curve of the maximum switching current.
*6 When embedding this hybrid IC onto the printed circuit board (board size 15mm×15mm)
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