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PD - 9.1495
PRELIMINARY
l l l l l l
IRL540N
HEXFET® Power MOSFET
D
Logic-Level Gate Drive Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated
VDSS = 100V RDS(on) = 0.044Ω
G S
ID = 30A
Description
Fifth Generation HEXFETs fr...
