HEXFET Power MOSFET
Description
PD - 91413E
IRLMS5703
HEXFET® Power MOSFET
l l l l
Generation V Technology Micro6 Package Style Ultra Low Rds(on) P-Channel MOSFET
D
1
6
A D
VDSS = -30V RDS(on) = 0.20Ω
D
2
5
D
G
3
4
S
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon are...
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