Audio MOSFET. IRLR4343PbF Datasheet

IRLR4343PbF Datasheet PDF


Part Number

IRLR4343PbF

Description

Digital Audio MOSFET

Manufacture

International Rectifier

Total Page 10 Pages
Datasheet
Download IRLR4343PbF Datasheet


IRLR4343PbF
PD - 95394A
DIGITAL AUDIO MOSFET
IRLR4343PbF
IRLU4343PbF
Features
l Advanced Process Technology
l Key Parameters Optimized for Class-D Audio
Amplifier Applications
l Low RDSON for Improved Efficiency
l Low Qg and Qsw for Better THD and Improved
Efficiency
l Low Qrr for Better THD and Lower EMI
l 175°C Operating Junction Temperature for
Ruggedness
l Repetitive Avalanche Capability for Robustness and
Reliability
l Multiple Package Options
l Lead-Free
IRLU4343-701PbF
Key Parameters
VDS 55
RDS(ON) typ. @ VGS = 10V
42
RDS(ON) typ. @ VGS = 4.5V
57
Qg typ.
28
TJ max
175
V
m:
m:
nC
°C
D
D-Pak
I-Pak
G
IRLR4343
IRLU4343
I-Pak Leadform 701
S IRLU4343-701
Refer to page 10 for package outline
Description
This Digital Audio HEXFET® is specifically designed for Class-D audio amplifier applications. This MosFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode reverse recovery
and internal Gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD
and EMI. Additional features of this MosFET are 175°C operating junction temperature and repetitive avalanche capability.
These features combine to make this MosFET a highly efficient, robust and reliable device for Class-D audio amplifier
applications.
Absolute Maximum Ratings
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
cContinuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
TJ
TSTG
Operating Junction and
Storage Temperature Range
hClamping Pressure
Thermal Resistance
Parameter
gRθJC
Junction-to-Case
gjRθJA Junction-to-Ambient (PCB Mounted)
gRθJA Junction-to-Ambient (free air)
Max.
55
±20
26
19
80
79
39
0.53
-40 to + 175
–––
Typ.
–––
–––
–––
Max.
1.9
50
110
Units
V
A
W
W/°C
°C
N
Units
°C/W
Notes  through Š are on page 10
www.irf.com
1
12/8/04

IRLR4343PbF
IRLR/U4343PbF & IRLU4343-701PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
55 ––– ––– V VGS = 0V, ID = 250µA
––– 15 ––– mV/°C Reference to 25°C, ID = 1mA
e––– 42 50 mVGS = 10V, ID = 4.7A
e––– 57 65
VGS = 4.5V, ID = 3.8A
VGS(th)
Gate Threshold Voltage
1.0 ––– ––– V VDS = VGS, ID = 250µA
VGS(th)/TJ
IDSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– -4.4 ––– mV/°C
––– ––– 2.0 µA VDS = 55V, VGS = 0V
––– ––– 25
VDS = 55V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage
––– ––– -100
VGS = -20V
gfs Forward Transconductance
Qg Total Gate Charge
8.8 ––– –––
––– 28 42
S VDS = 25V, ID = 19A
VDS = 44V
Qgs
Pre-Vth Gate-to-Source Charge
––– 3.5 –––
VGS = 10V
Qgd Gate-to-Drain Charge
––– 9.5 –––
ID = 19A
Qgodr
td(on)
tr
td(off)
Gate Charge Overdrive
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
––– 15 –––
––– 5.7 –––
See Fig. 6 and 19
ÃeVDD = 28V, VGS = 10V
––– 19 –––
ID = 19A
––– 23 ––– ns RG = 2.5
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
––– 5.3 –––
––– 740 –––
––– 150 –––
VGS = 0V
pF VDS = 50V
Crss
Reverse Transfer Capacitance
––– 59 –––
ƒ = 1.0MHz,
See Fig.5
Coss
Effective Output Capacitance
––– 250 –––
VGS = 0V, VDS = 0V to -44V
LD Internal Drain Inductance
––– 4.5 –––
Between lead,
nH 6mm (0.25in.)
G
LS Internal Source Inductance
––– 7.5 –––
from package
fand center of die contact
D
S
Avalanche Characteristics
Parameter
dEAS Single Pulse Avalanche Energy
ÃiIAR Avalanche Current
iEAR Repetitive Avalanche Energy
Diode Characteristics
Parameter
IS @ TC = 25°C Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
Ù(Body Diode)
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Typ.
Max.
––– 160
See Fig. 14, 15, 17a, 17b
Units
mJ
A
mJ
Min.
–––
–––
–––
–––
–––
Typ.
–––
–––
–––
52
100
Max. Units
Conditions
26 MOSFET symbol
A showing the
80 integral reverse
p-n junction diode.
e1.2 V TJ = 25°C, IS = 19A, VGS = 0V
78 ns TJ = 25°C, IF = 19A
e150 nC di/dt = 100A/µs
2 www.irf.com





@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)