Power MOSFET
Description
Advance Technical Information
TrenchTM HiperFETTM Power MOSFETs
IXFT150N20T IXFH150N20T
VDSS = 200V
ID25 = 150A ≤ RDS(on) 15mΩ
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD
dv/dt
TJ TJM Tstg TL TSOLD Md Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous ...
Similar Datasheet