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IXFN30N110P

IXYS Corporation
Part Number IXFN30N110P
Manufacturer IXYS Corporation
Title Polar Power MOSFET HiPerFET
Description PolarTM Power MOSFET HiPerFETTM N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symb...
Features • International standard package • Encapsulating epoxy meets G = Gate S = Source D D = Drain S S G Test Conditions TJ =...
Published May 13, 2011
Datasheet PDF File IXFN30N110P PDF File


IXFN30N110P
IXFN30N110P


Features

• International standard package
• Encapsulating epoxy meets G = Gate S = Source D D = Drain S S G Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 2...



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