SiC Power MOSFET
IXFN50N120SiC
preliminary
ID25 = 47 A VDSS = 1200 V R =DS(on) max 50 mΩ
Part number IXFN50N120SiC
D (3)
S G
S D
Backside: isolated UL pending
G (2)
S (1, 4)
Features / Advantages:
High speed switching with low capacitances High blocking voltage with low RDS(on) Easy to parallel and simple to drive Avalanche ruggedness ...
