• International standard packages
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped Inductive Switching (UIS) rated
• Low package inductance - easy to drive and to protect
• Fast intrinsic Rectifier Symbol VDSS VGS(th) IGSS IDSS Test Conditions VGS = 0 V, ID = 250...
IXFT24N50 PDF File
