High Current IGBT
Description
IGBT with Diode
Short Circuit SOA Capability
IXSN 80N60BD1 VCES IC25 VCE(sat) tfi
C G E
= = = =
600 V 160 A 2.5 V 180 ns
Preliminary Data Sheet
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Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (Silicon chip capability) Lead current limit (RMS) TC = 90°C TC = 25°C, 1 ms VGE = ...
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