MOSFET. IXTA26P10T Datasheet

IXTA26P10T Datasheet PDF


IXTA26P10T
TrenchPTM
Power MOSFET
P-Channel Enhancement Mode
Avalanche Rated
IXTY26P10T
IXTA26P10T
IXTP26P10T
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25C to 150C
TJ = 25C to 150C, RGS = 1M
Continuous
Transient
TC = 25C
TC = 25C, Pulse Width Limited by TJM
TC = 25C
TC = 25C
TC = 25C
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-220)
TO-252
TO-263
TO-220
Maximum Ratings
- 100
V
- 100
V
15
V
25
V
- 26
A
- 80
A
- 26
A
300
mJ
150
W
-55 ... +150
C
150
C
-55 ... +150
C
300
°C
260
°C
1.13 / 10
Nm/lb.in
0.35
g
2.50
g
3.00
g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = - 250A
VGS(th)
VDS = VGS, ID = - 250A
IGSS
VGS = 15V, VDS = 0V
IDSS
VDS = VDSS, VGS = 0V
TJ = 125C
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
Characteristic Values
Min. Typ. Max.
-100
V
- 2.5
- 4.5 V
50 nA
-10 A
- 250 A
90 m
VDSS =
ID25 =
RDS(on)
- 100V
- 26A
90m
TO-252 (IXTY)
G
S
TO-263 (IXTA)
D (Tab)
G
S
TO-220 (IXTP)
D (Tab)
GDS
D (Tab)
G = Gate
D = Drain
S = Source Tab = Drain
Features
International Standard Packages
Avalanche Rated
Extended FBSOA
Fast Intrinsic Diode
Low RDS(ON) and QG
Advantages
Easy to Mount
Space Savings
High Power Density
Applications
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
© 2017 IXYS CORPORATION, All Rights Reserved
DS100291B(8/17)


Part IXTA26P10T
Description Power MOSFET
Feature IXTA26P10T; TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTY26P10T IXTA26P10T IXTP26P10T .
Manufacture IXYS
Datasheet
Download IXTA26P10T Datasheet


isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-sou IXTA26P10T Datasheet
TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche IXTA26P10T Datasheet





IXTA26P10T
IXTY26P10T
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
gfs
VDS = -10V, ID = 0.5 • ID25, Note 1
Ciss
Coss
Crss
VGS = 0V, VDS = - 25V, f = 1MHz
td(on)
tr
td(off)
tf
Resistive Switching Times
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 3(External)
Qg(on)
Qgs
Qgd
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RthJC
RthCS
TO-220
Characteristic Values
Min. Typ. Max.
10
17
S
3820
pF
280
pF
93
pF
20
ns
15
ns
37
ns
11
ns
52
nC
18
nC
16
nC
0.83 C/W
0.50 C/W
IXTA26P10T
IXTP26P10T
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
IS
VGS = 0V
ISM
Repetitive, Pulse Width Limited by TJM
VSD
IF = IS, VGS = 0V, Note 1
trr
QRM
IRM
IF = 0.5 • ID25, -di/dt = -100A/s
VR = - 50V, VGS = 0V
Characteristic Values
Min. Typ. Max.
- 26 A
-104 A
-1.5 V
70
ns
210 nC
-6
A
Note 1: Pulse test, t 300s, duty cycle, d 2%.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844
by one or more of the following U.S. patents: 4,860,072 5,017,508
4,881,106 5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123B1
6,306,728B1
6,404,065B1
6,534,343
6,583,505
6,683,344 6,727,585 7,005,734B2 7,157,338B2
6,710,405B2 6,759,692 7,063,975B2
6,710,463
6,771,478B2 7,071,537



IXTA26P10T
IXTY26P10T IXTA26P10T
IXTP26P10T
Fig. 1. Output Characteristics @ TJ = 25oC
-28
VGS = -10V
- 9V
-24
- 8V
-20
- 7V
-16
-12
- 6V
-8
-4
- 5V
- 4V
0
0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 -2.2 -2.4
VDS - Volts
Fig. 3. Output Characteristics @ TJ = 125oC
-28
VGS = -10V
- 9V
-24
- 8V
-20
- 7V
-16
- 6V
-12
-8
- 5V
-4
- 4V
0
0
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
-4
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = -13A Value vs.
Drain Current
2.6
2.4
VGS = -10V
2.2
TJ = 125oC
2.0
1.8
1.6
1.4
TJ = 25oC
1.2
1.0
0.8
0
-10
-20
-30
-40
-50
-60
-70
-80
ID - Amperes
Fig. 2. Extended Output Characteristics @ TJ = 25oC
-100
VGS = -10V
-90
-80
- 9V
-70
- 8V
-60
-50
-40
- 7V
-30
- 6V
-20
-10
0
0
- 5V
-5
-10
-15
-20
-25
-30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = -13A Value vs.
Junction Temperature
2.0
1.8
VGS = -10V
1.6
I D = - 26A
I D = -13A
1.4
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 6. Maximum Drain Current vs. Case Temperature
-30
-25
-20
-15
-10
-5
0
-50
-25
0
25
50
75
100
125
150
TC - Degrees Centigrade
© 2017 IXYS CORPORATION, All Rights Reserved






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