High Voltage Power MOSFETs
Description
High Voltage Power MOSFETs
IXTH02N250 IXTV02N250S
N-Channel Enhancement Mode Fast Intrinsic Diode
VDSS = ID25 = ≤RDS(on)
2500V 200mA 450Ω
TO-247 (IXTH)
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
PD
TJ TJM Tstg
TL TSOLD Md FC Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited b...
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