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IXTH24N50L
N-Channel MOSFET
Description
isc N-Channel
MOSFET
Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 480mΩ@VGS=10V ·Fully characterized avalanche
voltage
and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·Current Regulators ·Solid State Circuit Breakers ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) ...
INCHANGE
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- IXYS Corporation
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