N-Channel MOSFET
Description
isc N-Channel MOSFET Transistor
·FEATURES ·Drain Source Voltage-
: VDSS ≥ 700V ·Static Drain-Source On-Resistance
: RDS(on) ≤ 300mΩ@VGS= 10V ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·DC-DC Converters ·Switch-Mode and Resonant-Mode Power Supplies
·ABSOLUTE MAXIM...
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