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IXTP130N10T MOSFET Datasheet PDF

Power MOSFET

Power MOSFET

 

 

 

Part Number IXTP130N10T
Description Power MOSFET
Feature TrenchMVTM Power MOSFET N-Channel Enhanc ement Mode Avalanche Rated IXTA130N10T IXTP130N10T VDSS = ID25 = RDS(on) ≤ 100V 130A 9.
1mΩ TO-263 (IXTA) Symb ol VDSS VDGR VGSM ID25 ILRMS IDM IA EAS PD TJ TJM Tstg TL TSOLD Md Weight Tes t Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Transient T C = 25°C Lead Current Limit, RMS TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.
6mm (0.
06 2 in.
) from case for 10s Plastic body f or 10 seconds Mounting torque (TO-220) TO-220 TO-263 Maximum Ratings 100 100 ± 30 130 75 350 65 500 360 -55 +1 75 175 -55 +175 300 260 .
Manufacture IXYS Corporation
Datasheet
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IXTP130N10T

 

 

 


 

 

 

Part Number IXTP130N10T
Description N-Channel MOSFET
Feature isc N-Channel MOSFET Transistor IXTP130 N10T ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 9.
1mΩ@VGS= 10V ·Fully characterized avalanche vol tage and current ·100% avalanche teste d ·Minimum Lot-to-Lot variations for r obust device performance and reliable o peration ·APPLICATION ·DC/DC Convert ers ·High Current Switching Applicatio ns ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃ ) SYMBOL PARAMETER VALUE VDSS Drai n-Source Voltage 100 VGS Gate-Source Voltage ±30 ID Drain Current-Conti nuous 130 IDM Drain Current-Single P ulsed 350 PD Total Dissipation @TC=2 5℃ 360 Tj Operating Junctio .
Manufacture INCHANGE
Datasheet
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IXTP130N10T

 

 

 

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