K10A50D Datasheet (data sheet) PDF





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K10A50D Datasheet - TK10A50D

K10A50D   K10A50D  

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TK10A50D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK10A50D Switching Regulator Applicat ions • • • • Low drain-source O N-resistance: RDS (ON) = 0.62 Ω (typ. ) High forward transfer admittance: ⎪ Yfs⎪ = 5.0 S (typ.) Low leakage curre nt: IDSS = 10 μA (max) (VDS = 500 V) E nhancement mode: Vth = 2.0 to 4.0 V (VD S = 10 V, ID = 1 mA) Unit: mm Absolute Maximu

Manufacture Part Number Description

Toshiba

K10A50D

TK10A50D




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