K10A60D Datasheet (data sheet) PDF





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K10A60D Datasheet - TK10A60D

K10A60D   K10A60D  

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www.DataSheet4U.com TK10A60D TOSHIBA F ield Effect Transistor Silicon N Channe l MOS Type (π-MOSⅦ) TK10A60D Switch ing Regulator Applications Unit: mm • • • Low drain-source ON-resi stance: RDS (ON) = 0.62 Ω (typ.) High forward transfer admittance: |Yfs| = 6 .0 S (typ.) Low leakage current: IDSS = 10 μA (VDS = 600 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA

Manufacture Part Number Description

Toshiba

K10A60D

TK10A60D




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