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K2411 Datasheet


FORWARD INTERNATIONAL ELECTRONICS LTD. SEMICONDUCTOR TECHNICAL DATA K2411 TELEPHONE TONE RINGER The 2411 is a bipolar integrated circuit designed for telephone tone ringer. Features * Designed for telephone bell replacement * Adjustable 2-tone frequency * Hysteresis circuit prevents false triggering and rotary dial “Chirps” *.

Forward Holdings
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Forward Holdings K2411 Datasheet
FORWARD INTERNATIONAL ELECTRONICS LTD. SEMICONDUCTOR TECHNICAL DATA K2411 TELEPHONE TONE RINGER The 2411 is a bipolar integrated circuit designed for telephone tone ringer. Features * Designed for telephone bell replacement * Adjustable 2-tone frequency * Hysteresis circuit prevents false triggering and rotary dial “Chirps” * Adjustable for reduced supply initiation current Package: DIP-8 Pin No 1 2 3 4 5 6 7 8 Name VCC RSL LFI LFO GND HFO HFI OUT Function Power supply (+) Resistor select Low freq osc input Low freq osc output Ground (-) High freq osc output High freq osc input Signal output 1 2 3 4 8 7 6 5 ABSOLUTE MAXIMUM RATING Parameter DC Supply Voltage Power Dissipation Operating Temperature Storage Temperature Symbol Vcc Pd Topr Tstg Rating 36 450 -25~+75 -55~+125 Unit V mW ¢J ¢J ELECTRICAL CHARACTERISTICS VCC=24V,Ta=25¢J(Unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Operating Supply Voltage Vcc 36 V Initiation Supply Voltage (note 1) Vsi 17 19 21 V Initiation Supply Current Isi Vcc=Vsi,No Load,Rsl=6.8k 1.4 3.5 4.2 mA Sustaining Voltage (note 2) Vsus 9.7 11 13 V Vcc=Vsus,No Load Sustaining Current Isus 0.2 1.4 2.5 mA Output High Voltage VOH Vcc=21V,IOH=15mA 17 19 21 V Output Low Voltage VOL Vcc=21V,IOL=15mA 1.6 V High Frequency 1 FH1 R3=191K, C3=6800pF 461 512 563 Hz High Frequency 2 R3=191K, C3=6800pF FH2 576 640 703 Hz Low Frequency R2=165K, C2=0.47uF FL 9 10 11 Hz Note: 1.initiation supply voltage (Vsi) is the supply voltage re.





DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2411 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. 3.0 ±0.3 PACKAGE DIMENSIONS (in millimeter) 10.6 MAX. 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX.

NEC
K2411.pdf

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NEC K2411 Datasheet
DATA SHEET www.DataSheet4U.com MOS FIELD EFFECT TRANSISTOR 2SK2411, 2SK2411-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2411 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. 3.0 ±0.3 PACKAGE DIMENSIONS (in millimeter) 10.6 MAX. 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. 3.6 ±0.2 4.8 MAX. 1.3 ±0.2 FEATURES • Low On-Resistance RDS(on)1 = 40 mΩ MAX. (@ VGS = 10 V, ID = 15 A) RDS(on)2 = 60 mΩ MAX. (@ VGS = 4 V, ID = 15 A) 4 1.3 ±0.2 0.75 ±0.1 2.54 1 2 3 • Low Ciss Ciss = 1500 pF TYP. • Built-in G-S Gate Protection Diodes • High Avalanche Capability Ratings QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 6.0 MAX. 0.5 ±0.2 2.8 ±0.2 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) JEDEC: TO-220AB MP-25 (TO-220) (10.0) 4 4.8 MAX. 8.5 ±0.2 1.3 ±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS 60 ±20 ±30 ± 120 75 1.5 150 30 90 V V A A W °C A mJ W 1.0 ±0.5 1.5 MAX. 1.4 ±0.2 1.0 ±0.3 (2.54) (2.54) 1 2 3 1.1 ±.





Telephone Tone Ringer

FORWARD INTERNATIONAL ELECTRONICS LTD. SEMICONDUCTOR TECHNICAL DATA K2411 TELEPHONE TONE RINGER The 2411 is a bipolar integrated circuit designed for telephone tone ringer. Features * Designed for telephone bell replacement * Adjustable 2-tone frequency * Hysteresis circuit prevents false triggering and rotary dial “Chirps” * Adjustable for reduced supply initiation current Package: DIP-8 Pin No 1 2 3 4 5 6 7 8 Name VCC RSL LFI LFO GND HFO HFI OUT Function Power supply (+) Resistor select Low freq osc input Low freq osc output Ground (-) High freq osc output High freq osc input Signal output 1 2 3 4 8 7 6 5 ABSOLUTE MAXIMUM RATING Parameter DC Supply Voltage Power Dissipation Operating Temperature Storage Temperature Symbol Vcc Pd Topr Tstg Rating 36 450 -25~+75 -55~+125 Unit V mW ¢J ¢J ELECTRICAL CHARACTERISTICS VCC=24V,Ta=25¢J(Unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Operating Supply Voltage Vcc 36 V Initiation Supply Voltage (note 1) Vsi 17 19 21 V Initiation Supply Current Isi Vcc=Vsi,No Load,Rsl=6.8k 1.4 3.5 4.2 mA Sustaining Voltage (note 2) Vsus 9.7 11 13 V Vcc=Vsus,No Load Sustaining Current Isus 0.2 1.4 2.5 mA Output High Voltage VOH Vcc=21V,IOH=15mA 17 19 21 V Output Low Voltage VOL Vcc=21V,IOL=15mA 1.6 V High Frequency 1 FH1 R3=191K, C3=6800pF 461 512 563 Hz High Frequency 2 R3=191K, C3=6800pF FH2 576 640 703 Hz Low Frequency R2=165K, C2=0.47uF FL 9 10 11 Hz Note: 1.initiation supply voltage (Vsi) is the supply voltage re.



2005-12-11 : PT9780    SSC600    SDI-C403    K2411    KK2411N    KK2411D    2SK2411    2SK2411-Z    BA343    UDN3625   


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