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K4D551638F-TC

Part Number K4D551638F-TC
Manufacturer Samsung
Title 256Mbit GDDR SDRAM
Description FOR 4M x 16Bit x 4 Bank GDDR SDRAM The K4D551638F is 268,435,456 bits of hyper synchronous data rate Dynamic RAM organized as 4 x 4,194,304 words ...
Features
• 2.6V + 0.1V power supply for device operation
• 2.6V + 0.1V power supply for I/O interface
• SSTL_2 compatible inputs/outputs
• 4 banks operation
• MRS cycle with address key programs -. Read latency 3 (clock) -. Burst length (2, 4 and 8) -. Burst type (sequential & interleave)
• All inputs except...

File Size 206.99KB
Datasheet K4D551638F-TC PDF File







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