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K4S281632B-TC10

Part Number	K4S281632B-TC10
Manufacturer	Samsung semiconductor
Description	128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL
Published	Apr 7, 2005
Detailed Description	K4S281632B CMOS SDRAM 128Mbit SDRAM 2M x 16Bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 Aug. 1999 * Samsung Ele...
Datasheet	K4S281632B-TC10 PDF File

Overview

...ctronics reserves the right to change products or specification without notice.
Rev.
0.
0 Aug.
1999 K4S281632B 2M x 16Bit x 4 Banks Synchronous DRAM FEATURES • • • • JEDEC standard 3.
3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -.
CAS latency (2 & 3) -.
Burst length (1, 2, 4, 8 & Full page) -.
Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock.
Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K cycle) CMOS SDRAM GENERAL DESCRIPTION The K4S281632B is 134,217,728 bits synchronous high data rate Dynamic RAM organized as 4...

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