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K4S561632E-TC75

Samsung semiconductor
Part Number K4S561632E-TC75
Manufacturer Samsung semiconductor
Title 256Mb E-die SDRAM Specification
Description The K4S560432E / K4S560832E / K4S561632E is 268,435,456 bits synchronous high data rate Dynamic RAM organized as 4 x 16,785,216 / 4 x 8,392,608 / ...
Features
• JEDEC standard 3.3V power supply
• LVTTL compatible with multiplexed address
• Four banks operation
• MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave)
• All inputs are sampled at the positive going edge of t...

Published Apr 7, 2005
Datasheet PDF File K4S561632E-TC75 PDF File


K4S561632E-TC75
K4S561632E-TC75


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