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K4X1G323PC-LG

Part Number	K4X1G323PC-LG
Manufacturer	Samsung semiconductor
Description	32Mx32 Mobile DDR SDRAM
Published	May 16, 2010
Detailed Description	K4X1G323PC - L(F)E/G 32Mx32 Mobile DDR SDRAM 1. FEATURES • VDD/VDDQ = 1.8V/1.8V • Double-data-rate architecture; two dat...
Datasheet	K4X1G323PC-LG PDF File

Overview

K4X1G323PC - L(F)E/G 32Mx32 Mobile DDR SDRAM 1.
FEATURES • VDD/VDDQ = 1.
8V/1.
8V • Double-data-rate architecture; two data transfers per clock cycle • Bidirectional data strobe(DQS) • Four banks operation • Differential clock inputs(CK and CK) • MRS cycle with address key programs - CAS Latency ( 3 ) - Burst Length ( 2, 4, 8, 16 ) - Burst Type (Sequential & Interleave) • EMRS cycle with address key programs - Partial Array Self Refresh ( Full, 1/2, 1/4 Array ) - Output Driver Strength Control ( Full, 1/2, 1/4, 1/8 ) • Internal Temperature Compensated Self Refresh • All inputs except data & DM are sampled at the positive going edge of the system clock(CK).
www.
DataSheet4U.
com • Data I/O transa...

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