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K5A60D

Toshiba

TK5A60D

Description
TK5A60D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK5A60D Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 1.2 Ω (typ.) High forward transfer admittance: ⎪Yfs⎪ = 3.0 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 600 V) Enhancement-mode: Vth = 2.4 to 4.4 V (VDS = 10 V, ID = 1 mA) Ф3.2 ± 0...


Toshiba

K5A60D

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