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Manufacture Part Number Description PDF
Samsung
Samsung
K9F5608U0C NAND Flash Memory
K9F5608Q0C K9F5616Q0C K9F5608D0C K9F5616D0C K9F5608U0C K9F5616U0C

FLASH MEMORY

Document Title
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

Revision History
Revision No. History
0.0 Initial issue.


K9F5608U0C pdf
Samsung semiconductor
Samsung semiconductor
K9F5608U0C-D 512Mb/256Mb 1.8V NAND Flash Errata
ELECTRONICS

March. 2003

San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799

512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC c
K9F5608U0C-D pdf
Samsung semiconductor
Samsung semiconductor
K9F5608U0C-DCB0 512Mb/256Mb 1.8V NAND Flash Errata
ELECTRONICS

March. 2003

San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799

512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC c
K9F5608U0C-DCB0 pdf
Samsung semiconductor
Samsung semiconductor
K9F5608U0C-DIB0 512Mb/256Mb 1.8V NAND Flash Errata
ELECTRONICS

March. 2003

San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799

512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC c
K9F5608U0C-DIB0 pdf
Samsung semiconductor
Samsung semiconductor
K9F5608U0C-F 512Mb/256Mb 1.8V NAND Flash Errata
ELECTRONICS

March. 2003

San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799

512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC c
K9F5608U0C-F pdf
Samsung semiconductor
Samsung semiconductor
K9F5608U0C-FCB0 512Mb/256Mb 1.8V NAND Flash Errata
ELECTRONICS

March. 2003

San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799

512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC c
K9F5608U0C-FCB0 pdf
Samsung semiconductor
Samsung semiconductor
K9F5608U0C-FIB0 512Mb/256Mb 1.8V NAND Flash Errata
ELECTRONICS

March. 2003

San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799

512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC c
K9F5608U0C-FIB0 pdf
Samsung semiconductor
Samsung semiconductor
K9F5608U0C-H 512Mb/256Mb 1.8V NAND Flash Errata
ELECTRONICS

March. 2003

San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799

512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC c
K9F5608U0C-H pdf
Samsung semiconductor
Samsung semiconductor
K9F5608U0C-HCB0 512Mb/256Mb 1.8V NAND Flash Errata
ELECTRONICS

March. 2003

San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799

512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC c
K9F5608U0C-HCB0 pdf
Samsung semiconductor
Samsung semiconductor
K9F5608U0C-HIB0 512Mb/256Mb 1.8V NAND Flash Errata
ELECTRONICS

March. 2003

San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799

512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC c
K9F5608U0C-HIB0 pdf
Samsung semiconductor
Samsung semiconductor
K9F5608U0C-P 512Mb/256Mb 1.8V NAND Flash Errata
ELECTRONICS

March. 2003

San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799

512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC c
K9F5608U0C-P pdf
Samsung semiconductor
Samsung semiconductor
K9F5608U0C-PCB0 512Mb/256Mb 1.8V NAND Flash Errata
ELECTRONICS

March. 2003

San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799

512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC c
K9F5608U0C-PCB0 pdf
Samsung semiconductor
Samsung semiconductor
K9F5608U0C-PIB0 512Mb/256Mb 1.8V NAND Flash Errata
ELECTRONICS

March. 2003

San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799

512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC c
K9F5608U0C-PIB0 pdf
Samsung semiconductor
Samsung semiconductor
K9F5608U0C-V 512Mb/256Mb 1.8V NAND Flash Errata

K9F5608U0C-V pdf
Samsung semiconductor
Samsung semiconductor
K9F5608U0C-V 512Mb/256Mb 1.8V NAND Flash Errata
ELECTRONICS

March. 2003

San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799

512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC c
K9F5608U0C-V pdf
Samsung semiconductor
Samsung semiconductor
K9F5608U0C-VCB0 512Mb/256Mb 1.8V NAND Flash Errata
ELECTRONICS

March. 2003

San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799

512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC c
K9F5608U0C-VCB0 pdf
Samsung semiconductor
Samsung semiconductor
K9F5608U0C-VIB0 512Mb/256Mb 1.8V NAND Flash Errata
ELECTRONICS

March. 2003

San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799

512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC c
K9F5608U0C-VIB0 pdf
Samsung semiconductor
Samsung semiconductor
K9F5608U0C-Y 512Mb/256Mb 1.8V NAND Flash Errata
ELECTRONICS

March. 2003

San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799

512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC c
K9F5608U0C-Y pdf
Samsung semiconductor
Samsung semiconductor
K9F5608U0C-YCB0 512Mb/256Mb 1.8V NAND Flash Errata
ELECTRONICS

March. 2003

San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799

512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC c
K9F5608U0C-YCB0 pdf
Samsung semiconductor
Samsung semiconductor
K9F5608U0C-YIB0 512Mb/256Mb 1.8V NAND Flash Errata
ELECTRONICS

March. 2003

San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799

512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC c
K9F5608U0C-YIB0 pdf




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