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Manufacture Part Number Description PDF
Samsung
Samsung
K9F6408Q0C 8M x 8 Bit Bit NAND Flash Memory
K9F6408Q0C K9F6408U0C
Document Title
8M x 8 Bit NAND Flash Memory

FLASH MEMORY

Revision History
Revision No. History
0.0 Initial issue.
0.1 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA --
K9F6408Q0C pdf
Samsung semiconductor
Samsung semiconductor
K9F6408Q0C 8M x 8 Bit Bit NAND Flash Memory
ELECTRONICS

March. 2003

San 16 Banwol-Ri Taean-Eup Hwasung- City Kyungki Do, Korea Tel.) 82 - 31 - 208 - 6463 Fax.) 82 - 31 -208 - 6799

512Mb/256Mb 1.8V NAND Flash Errata
Description : Some of AC c
K9F6408Q0C pdf
Samsung semiconductor
Samsung semiconductor
K9F6408Q0C-B 8M x 8 Bit Bit NAND Flash Memory
K9F6408Q0C K9F6408U0C

FLASH MEMORY

Document Title
8M x 8 Bit NAND Flash Memory

Revision History
Revision No. History
0.0 0.1 Initial issue. 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -
K9F6408Q0C-B pdf
Samsung semiconductor
Samsung semiconductor
K9F6408Q0C-H 8M x 8 Bit Bit NAND Flash Memory
K9F6408Q0C K9F6408U0C

FLASH MEMORY

Document Title
8M x 8 Bit NAND Flash Memory

Revision History
Revision No. History
0.0 0.1 Initial issue. 1. IOL(R/B) of 1.8V device is changed. -min. Value: 7mA -
K9F6408Q0C-H pdf




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