SILICON EPITAXIAL SCHOTTKY BARRIER TYPE DIODE
Description
SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES Low Forward Voltage : VF=0.54V (Typ.). Low Reverse Current : IR=5 A (Max.). Small Package : USM.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Power Dissipation Junction Temperature Storage Te...
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