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KMB6D0DN30QB

KEC
Part Number KMB6D0DN30QB
Manufacturer KEC
Description Dual N-Channel MOSFET
Published Jun 21, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching t...
Datasheet PDF File KMB6D0DN30QB PDF File

KMB6D0DN30QB
KMB6D0DN30QB

Overview
SEMICONDUCTOR TECHNICAL DATA GENERAL DESCRIPTION This Trench MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.
It is mainly suitable for portable equipment and DC-DC Converter Applications.
FEATURES VDSS=30V, ID=6A.
Drain-Source ON Resistance.
RDS(ON)=28m (Max.
) @VGS=10V RDS(ON)=42m (Max.
) @VGS=4.
5V Super High Dense Cell Design High Power and Current Handing Capability MAXIMUM RATING (Ta=25 Unless otherwise noted) CHARACTERISTIC SYMBOL PATING Drain Source Voltage VDSS 30 Gate Source Voltage Drain Current DC Pulsed Drain Source Diode Forward Current VGSS ID * IDP IS 20 6 30 1.
7 Drain Power D...


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