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KML0D3P20V MOSFET Datasheet PDFP-Channel MOSFET P-Channel MOSFET |
| Part Number | KML0D3P20V |
|---|---|
| Description | P-Channel MOSFET |
| Feature | SEMICONDUCTOR
TECHNICAL DATA
General Des cription
It s Mainly Suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter. FEATURES V DSS=-20V, ID=-0. 3A Drain-Soure ON Resis tance : RDS(ON)=1. 2 : RDS(ON)=1. 6 : RD S(ON)=2. 7 @ VGS=-4. 5V @ VGS=-2. 5V @ VG S=-1. 8V KML0D3P20V P-Ch Trench MOSFET MAXIMUM RATING (Ta=25 ) CHARACTERISTI C SYMBOL Drain-Source Voltage Gate-S ource Voltage Drain Current DC @TA=25 DC @TA=85 Pulsed Source-Drain Diode C urrent Drain Power Dissipation Maximu m Junction Temperature Storage Tempera ture Range Thermal Resistance, Junctio n to Ambient . |
| Manufacture | KEC |
| Datasheet |
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| Part Number | KML0D3P20V |
|---|---|
| Description | P-Channel MOSFET |
| Feature | SEMICONDUCTOR
TECHNICAL DATA
General Des cription
It s Mainly Suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter. FEATURES V DSS=-20V, ID=-0. 3A Drain-Soure ON Resis tance : RDS(ON)=1. 2 : RDS(ON)=1. 6 : RD S(ON)=2. 7 @ VGS=-4. 5V @ VGS=-2. 5V @ VG S=-1. 8V KML0D3P20V P-Ch Trench MOSFET MAXIMUM RATING (Ta=25 ) CHARACTERISTI C SYMBOL Drain-Source Voltage Gate-S ource Voltage Drain Current DC @TA=25 DC @TA=85 Pulsed Source-Drain Diode C urrent Drain Power Dissipation Maximu m Junction Temperature Storage Tempera ture Range Thermal Resistance, Junctio n to Ambient . |
| Manufacture | KEC |
| Datasheet |
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