MOSFET. KRF7325 Datasheet

KRF7325 Datasheet PDF

Part KRF7325
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7325 IC IC Features Trench Technology Ultra Low On-Resistance Dual.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7325 Datasheet

SMD Type HEXFET Power MOSFET KRF7325 IC IC Features Trench KRF7325 Datasheet





KRF7325
SMD Type
HEXFET Power MOSFET
KRF7325
ICIC
Features
Trench Technology
Ultra Low On-Resistance
Dual P-Channel MOSFET
Low Profile (<1.8mm)
Available in Tape & Reel
1: Source 1
2: Gate 1
7,8: Drain 1
3: Source 2
4: Gate 2
5,6: Drain 2
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain- Source Voltage
VDS
Continuous Drain Current, VGS @ -4.5V @ Ta = 25
ID
Continuous Drain Current, VGS @ -4.5V @ Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation *2
@Ta= 25
PD
Power Dissipation *2
@Ta = 70
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Junction and Storage Temperature Range
TJ, TSTG
Junction-to-Drain Lead
R JL
Maximum Junction-to-Ambient *2
R JA
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 When mounted on 1 inch square copper board.
Rating
-12
-7.8
-6.2
-39
2.0
1.3
16
8.0
-55 to + 150
20
62.5
Unit
V
A
W
W
W/
V
/W
/W
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KRF7325
SMD Type
ICIC
KRF7325
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Testconditons
V(BR)DSS VGS = 0V, ID = -250 A
V(BR)DSS/ TJ ID = -1mA,Reference to 25
VGS = -4.5V, ID = -7.8A*1
RDS(on) VGS = -2.5V, ID = -6.2A*1
VGS = -1.8V, ID = -3.9A*1
VGS(th)
VDS = VGS, ID = -250 A
gfs VDS = -10V, ID = -7.8A*1
IDSS
IGSS
VDS = -9.6V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 70
VGS = -8.0V
VGS = 8.0V
Qg ID = -7.8A
Qgs VDS = -6.0V
Qgd VGS = -4.5V
td(on)
VDD = -6.0V,VGS=-4.5V
tr ID = -1.0A
td(off)
RG = 6
tf
Ciss VGS = 0V
Coss
VDS = -10V
Crss f = 1.0MHz
Continuous Source Current Body Diode)
IS
Pulsed Source Current Body Diode) *2
ISM
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
VSD TJ = 25 , IS = -2.0A, VGS = 0V*1
trr TJ = 25 , IF =-2.0A
Qrr di/dt = -100A/ s*1
*1 Pulse width 400 s; duty cycle 2%.
*2 Repetitive rating; pulse width limited by max. junction temperature.
Min Typ Max Unit
-12 V
0.007
V/
24
33 m
49
-0.40
-0.90 V
17 S
-1.0
A
-25
-100
nA
100
22 33
5.0 7.5 nC
4.7 7.0
9.4
9.8
ns
240
180
2020
520 pF
330
-2.0
A
-39
-1.2 V
36 54 ns
28 42 nC
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