MOSFET. KRF7350 Datasheet

KRF7350 Datasheet PDF

Part KRF7350
Description HEXFET Power MOSFET
Feature SMD Type HEXFET Power MOSFET KRF7350 IC IC Features Ultra Low On-Resistance Dual N and P Channel M.
Manufacture Guangdong Kexin Industrial
Datasheet
Download KRF7350 Datasheet

SMD Type HEXFET Power MOSFET KRF7350 IC IC Features Ultra KRF7350 Datasheet





KRF7350
SMD Type
HEXFET Power MOSFET
KRF7350
Features
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Surface Mount
Available in Tape and Reel
ICIC
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Drain-Source Voltage
VDS
Continuous Drain Current Ta = 25
ID
Continuous Drain Current Ta = 70
ID
Pulsed Drain Current *1
IDM
Power Dissipation
@Ta= 25
PD
Linear Derating Factor
Gate-to-Source Voltage
VGS
Single Pulse Avalanche Energy *4
EAS
Peak Diode Recovery dv/dt *2
dv/dt
Junction and Storage Temperature Range
TJ, TSTG
Maximum Junction-to-Ambient *3
R JA
Junction-to-Drain Lead
R JL
*1 Repetitive rating; pulse width limited by max. junction temperature.
*2 Pulse width 400 s; duty cycle 2%.
*3 Surface mounted on 1 in square Cu board
*4 N channel: Starting TJ = 25 , L = 4.0mH, RG = 25 , IAS = 4.2A
P channel: Starting TJ = 25 , L = 11mH, RG = 25 , IAS = -3.0A
N-Channel
P-Channel
100 -100
2.1 -1.5
1.7 -1.2
8.4 -6.0
2.0
0.016
20
35 51
4.0 4.3
-55 to + 150
62.5
20
Unit
V
A
W
W/
V
mJ
V/ns
/W
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KRF7350
SMD Type
ICIC
KRF7350
Electrical Characteristics Ta = 25
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Symbol
Testconditons
VGS = 0V, ID = 250 A
V(BR)DSS
VGS = 0V, ID = -250 A
V(BR)DSS/ ID = 1mA,Reference to 25
TJ ID = -1mA,Reference to 25
RDS(on)
VGS = 10V, ID = 2.1A*1
VGS = -10V, ID = -1.5A*1
VGS(th)
gfs
VDS = VGS, ID = 250 A
VDS = VGS, ID = -250 A
VDS = 50V, ID = 2.1A*1
VDS = -50V, ID = -1.5A*1
VDS = 100V, VGS = 0V
VDS = -100V, VGS = 0V
IDSS
VDS = 80V, VGS = 0V, TJ = 70
VDS = -80V, VGS = 0V, TJ = 70
Gate-to-Source Forward Leakage
IGSS VGS = 20V
Total Gate Charge
N-Channel
Qg
ID =2.1A,VDS = 80V,VGS =10V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Qgs
P-Channel
ID = -1.5A,VDS = -80V,VGS = -10V
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
td(on)
tr
td(off)
N-Channel
VDD = 50V,ID = 1.A,RG = 22
RD=50 ,VGS = 10V
P-Channel
VDD = -50V,ID = -1.0A,RG = 22
RD=50 ,VGS = -10V
Fall Time
tf
Input Capacitance
N-Channel
Ciss
VGS = 0V,VDS = 25V,f = 1.0MHz
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
P-Channel
VGS = 0V,VDS = -25V,f = 1.0MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
Min Typ Max Unit
100
-100
V
0.12
-0.11
V/
0.21
0.48
2.0 4.0
V
-2.0 -4.0
2.4
S
1.1
25
-25
A
250
-250
100
nA
100
19 28
21 31
3.0 4.5
nC
3.4 5.1
8.8 13
10 16
6.7
25
11
13
ns
35
30
20
40
380
360
100
pF
110
54
65
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