Silicon NPN Power Transistor
Description
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
KSD986
DESCRIPTION ·High DC Current Gain-
: hFE = 2000(Min)@ IC= 1A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 80V(Min) ·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 1A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
A...
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