TRANSISTOR. KTC3531T Datasheet

KTC3531T Datasheet PDF

Part KTC3531T
Description EPITAXIAL PLANAR NPN TRANSISTOR
Feature SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY POWER AMP, CONVERTER ELECTRONIC GOVERNOR APPLICATIONS FEA.
Manufacture KEC
Datasheet
Download KTC3531T Datasheet

SEMICONDUCTOR TECHNICAL DATA LOW FREQUENCY POWER AMP, CONVER KTC3531T Datasheet




KTC3531T
SEMICONDUCTOR
TECHNICAL DATA
LOW FREQUENCY POWER AMP, CONVERTER
ELECTRONIC GOVERNOR APPLICATIONS
FEATURES
Low Saturation Voltage
: VCE(sat)=0.3V(Max.) at IC=0.5A.
Complementary to KTA1531T.
MAXIMUM RATING (Ta=25)
CHARACTERISTIC
SYMBOL
RATING
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
PC *
Tj
30
20
5
1
0.9
150
Storage Temperature Range
Tstg -55150
* Package mounted on a ceramic board (600Ὅᴧ0.8)
UNIT
V
V
V
A
W
KTC3531T
EPITAXIAL PLANAR NPN TRANSISTOR
E
KB
23
1
DIM
A
B
C
D
E
F
G
H
I
J
K
L
MILLIMETERS
2.9 +_0.2
1.6+0.2/-0.1
0.70+_ 0.05
0.4+_ 0.1
2.8+0.2/-0.3
1.9+_ 0.2
0.95
0.16+_ 0.05
0.00-0.10
0.25+0.25/-0.15
0.60
0.55
H
JJ
1. EMITTER
2. BASE
3. COLLECTOR
TSM
Marking
hFE Rank
H AType Name
Lot No.
ELECTRICAL CHARACTERISTICS (Ta=25)
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
ICBO
IEBO
hFE(1) (Note)
hFE(2)
VCE(sat)
VBE(sat)
fT
VCB=20V, IE=0
VEB=5V, IC=0
VCE=2V, IC=50mA
VCE=2V, IC=1A(Pulse)
IC=500mA, IB=50mA
IC=500mA, IB=50mA
VCE=10V, IC=50mA
Collector Output Capacitance
Cob VCB=10V, IE=0, f=1MHz
Note : hFE Classification Y:120240, GR(G):200400
MIN.
-
-
120
30
-
-
-
-
TYP.
-
-
-
-
0.1
0.85
180
15
MAX.
0.1
0.1
400
-
0.3
1.2
-
-
UNIT
A
A
V
V
MHz
pF
2001. 6. 23
Revision No : 0
1/2



KTC3531T
KTC3531T
I C - VCE
800 IB=10mA
IB =8mA
600 IB=6mA
IB =4mA
400
I B =2mA
200
IB =1mA
IB =0mA
0
0 1 2 34 5 6 7 8
COLLECTOR-EMITTER VOLTAGE VCE (V)
1000
800
600
I C - VCE
IB =30mA
IB =20mA
IB =15mA
IB =10mA
IB =8mA
400 IB =5mA
IB =3mA
200
I B =1mA
0 I B=0mA
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
COLLECTOR-EMITTER VOLTAGE VCE (V)
1.4
VCE =2V
1.2
I C - VBE
1.0
0.8
0.6
0.4
0.2
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE-EMITTER VOLTAGE VBE (V)
2.0
1.0 IC /I B=10
0.5
0.3
VCE(sat) - I C
0.1
0.05
0.03
0.01
10
30 100 300 1k 3k
COLLECTOR CURRENT I C (mA)
10k
2K
1K
500
300
100
50
30
10
1
fT - IC
VCE =10V
3 10 30 100 300
COLLECTOR CURRENT IC (mA)
1k
2001. 6. 23
Revision No : 0
hFE - IC
500
300
VCE =2V
100
50
30
10
5
3
1
1 3 10 30 100 300 1k 3k 10k
COLLECTOR CURRENT I C (mA)
2/2




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