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L2SD2114KWLT3G

Part Number	L2SD2114KWLT3G
Manufacturer	Leshan Radio Company
Description	NPN silicon transistor
Published	Aug 11, 2015
Detailed Description	Epitaxial planar type LESHAN RADIO COMPANY, LTD. NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1) High DC c...
Datasheet	L2SD2114KWLT3G PDF File

Overview

Epitaxial planar type LESHAN RADIO COMPANY, LTD.
NPN silicon transistor L2SD2114KVLT1G Series zFeatures 1) High DC current gain.
S-L2SD2114KVLT1G Series hFE = 1200 (Typ.
) 2) High emitter-base voltage.
VEBO =12V (Min.
) 3 3) Low VCE (sat).
VCE (sat) = 0.
18V (Typ.
) (IC / IB = 500mA / 20mA) 1 2 4) We declare that the material of product compliance with RoHS requirements.
5) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
SOT– 23 (TO–236AB) zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage VCBO VCEO VEBO Collector cu...

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