MOSFET. LBSS123LT1G Datasheet

LBSS123LT1G Datasheet PDF

Part LBSS123LT1G
Description N-CHANNEL POWER MOSFET
Feature LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G FEATURE ƽ Pb-Free Package is availab.
Manufacture Leshan Radio Company
Datasheet
Download LBSS123LT1G Datasheet

LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123L LBSS123LT1G Datasheet




LBSS123LT1G
LESHAN RADIO COMPANY, LTD.
N-CHANNEL POWER MOSFET
LBSS123LT1G
FEATURE
ƽ Pb-Free Package is available.
ƽ S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
DEVICE MARKING AND ORDERING INFORMATION
Device
Marking
Shipping
LBSS123LT1G
S-LBSS123LT1G
SA
3000/Tape&Reel
LBSS123LT3G
S-LBSS123LT3G
SA 10000/Tape&Reel
MAXIMUM RATINGS
Rating
Drain–Source Voltage
Gate–Source Voltage
– Continuous
– Non–repetitive (tp 50 µs)
Drain Current
Continuous (Note 1.)
Pulsed (Note 2.)
Symbol
VDSS
VGS
VGSM
ID
IDM
Value
100
±20
±40
0.17
0.68
Unit
Vdc
Vdc
Vpk
Adc
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR–5
Board (Note 3.)
TA = 25°C
Derate above 25°C
PD 225 mW
1.8 mW/°C
Thermal Resistance, Junction to
RqJA
556
°C/W
Ambient
Junction and Storage Temperature TJ, Tstg –55 to +150
°C
1. The Power Dissipation of the package may result in a lower continuous drain
current.
2. Pulse Width v 300 ms, Duty Cycle v 2.0%.
3. FR–5 = 1.0  0.75  0.062 in.
LBSS123LT1G
S-LBSS123LT1G
3
1
2
SOT-23
Drain
3
1
Gate
2 Source
Rev .A 1/4



LBSS123LT1G
LESHAN RADIO COMPANY, LTD.
LBSS123LT1G , S-LBSS123LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max Unit
OFF CHARACTERISTICS
Drain–Source Breakdown Voltage
(VGS = 0, ID = 250 µAdc)
V(BR)DSS 100
– Vdc
Zero Gate Voltage Drain Current
(VGS = 0, VDS = 100 Vdc) TJ = 25°C
TJ = 125°C
IDSS
µAdc
– 15
– 60
Gate–Body Leakage Current
(VGS = 20 Vdc, VDS = 0)
IGSS
– 50 nAdc
ON CHARACTERISTICS (Note 4.)
Gate Threshold Voltage
(VDS = VGS, ID = 1.0 mAdc)
VGS(th)
0.8
2.0 Vdc
Static Drain–Source On–Resistance
(VGS = 10 Vdc, ID = 100 mAdc)
rDS(on)
5.0 6.0
Forward Transconductance
(VDS = 25 Vdc, ID = 100 mAdc)
gfs 80 –
– mmhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Ciss – 20 – pF
Output Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
Coss – 9.0 – pF
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0, f = 1.0 MHz)
SWITCHING CHARACTERISTICS(4)
Crss – 4.0 – pF
Turn–On Delay Time
Turn–Off Delay Time
REVERSE DIODE
(VCC = 30 Vdc, IC = 0.28 Adc,
td(on)
20
ns
VGS = 10 Vdc, RGS = 50 )
td(off)
40
ns
Diode Forward On–Voltage
(ID = 0.34 Adc, VGS = 0 Vdc)
4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
VSD
– 1.3 V
Rev .A 2/4




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